MRF5S19060NBR1 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* 200°C Capabl.
with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for lar.
1 μF, 35 V Tantalum Capacitor 10 pF 100B Chip Capacitor 6.8 pF 100B Chip Capacitors 10 μF, 35 V Tantalum Capacitors 220 μF, 63 V Electrolytic Capacitor, Radial 0.8 pF 100B Chip Capacitor 1.5 pF 100B Chip Capacitor 1.0 pF 100B Chip Capacitor 0.2 pF 10.
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